74LVC1G38 datasheet(6/15 Pages) NXP

Part #	74LVC1G38

Description	2-input NAND gate; open drain

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Manufacturer	NXP [NXP Semiconductors]

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6 / 15 page

74LVC1G38_3

Product data sheet

Rev. 03 — 27 August 2007

6 of 15

NXP Semiconductors

74LVC1G38

2-input NAND gate; open drain

[1]

All typical values are measured at VCC = 3.3 V and Tamb = 25 °C.

11. Dynamic characteristics

[1]

Typical values are measured at Tamb =25 °C and VCC = 1.8 V, 2.5 V, 2.7 V, 3.3 V and 5.0 V respectively.

[2]

tpd is the same as tPZL and tPLZ.

[3]

CPD is used to determine the dynamic power dissipation (PD in µW).

PD =CPD × VCC2 × fi × N+ ∑(CL × VCC2 × fo) where:

fi = input frequency in MHz;

fo = output frequency in MHz;

CL = output load capacitance in pF;

VCC = supply voltage in V;

N = number of inputs switching;

∑(CL × VCC2 × fo) = sum of outputs.

VOL

LOW-level output voltage

VI =VIH or VIL

--

-

IO = 100 µA; VCC = 1.65 V to 5.5 V

-

0.1

V

IO = 4 mA; VCC = 1.65 V

-

0.70

V

IO = 8 mA; VCC = 2.3 V

-

0.45

V

IO = 12 mA; VCC = 2.7 V

-

0.60

V

IO = 24 mA; VCC = 3.0 V

-

0.80

V

IO = 32 mA; VCC = 4.5 V

-

0.80

V

II

input leakage current

VI = 5.5 V or GND;

VCC = 0 V to 5.5 V

--

±100

µA

IOZ

OFF-state output current

VI =VIH or VIL; VO =VCC or GND;

VCC = 5.5 V

--

±200

µA

IOFF

power-off leakage current VI or VO = 5.5 V; VCC = 0 V

-

±200

µA

ICC

supply current

VI = 5.5 V or GND;

VCC = 1.65 V to 5.5 V; IO =0A

-

200

µA

∆ICC

additional supply current

VI =VCC − 0.6 V; IO =0A;

VCC = 2.3 V to 5.5 V; per pin

-

5000

µA

Table 7.

Static characteristics …continued

At recommended operating conditions; voltages are referenced to GND (ground = 0 V).

Symbol Parameter

Conditions

Min

Typ

Max

Unit

Table 8.

Dynamic characteristics

Voltages are referenced to GND (ground = 0 V). For test circuit see Figure 8.

Symbol Parameter

Conditions

−40 °C to +85 °C

−40 °C to +125 °C Unit

Min

Typ[1]

Max

Min

Max

tpd

propagation delay

A, B to Y; see Figure 7

[2]

VCC = 1.65 V to 1.95 V

1.0

3.0

10.0

1.0

12.5

ns

VCC = 2.3 V to 2.7 V

0.5

1.8

6.0

0.5

7.5

ns

VCC = 2.7 V

0.5

2.5

5.0

0.5

6.5

ns

VCC = 3.0 V to 3.6 V

0.5

2.3

4.5

0.5

5.7

ns

VCC = 4.5 V to 5.5 V

0.5

1.5

3.9

0.5

4.9

ns

CPD

power dissipation

capacitance

VCC = 3.3 V;

VI = GND to VCC

[3]

-

6

---

pF

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