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IRF6775MTRPBF Datasheet(PDF) 2 Page - International Rectifier |
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IRF6775MTRPBF Datasheet(HTML) 2 Page - International Rectifier |
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2 / 10 page  IRF6775MTRPbF 2 www.irf.com S D G Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.53mH, RG = 25Ω, IAS = 11.2A. Surface mounted on 1 in. square Cu board. Pulse width ≤ 400μs; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Used double sided cooling , mounting pad with large heatsink. Mounted on minimum footprint full size board with metalized back and with small clip heatsink. TC measured with thermal couple mounted to top (Drain) of part. Rθ is measured at TJ of approximately 90°C. Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 150 ––– ––– V ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.17 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 47 56 m Ω VGS(th) Gate Threshold Voltage 3.0 ––– 5.0 V IDSS Drain-to-Source Leakage Current ––– ––– 20 μA ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 RG(int) Internal Gate Resistance ––– ––– 3.0 Ω Dynamic @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units gfs Forward Transconductance 11 ––– ––– S Qg Total Gate Charge ––– 25 36 VDS = 75V Qgs1 Pre-Vth Gate-to-Source Charge ––– 5.8 ––– VGS = 10V Qgs2 Post-Vth Gate-to-Source Charge ––– 1.4 ––– ID = 5.6A Qgd Gate-to-Drain Charge ––– 6.6 ––– nC See Fig. 6 and 17 Qgodr Gate Charge Overdrive ––– 11 ––– Qsw Switch Charge (Qgs2 + Qgd) ––– 8.0 ––– td(on) Turn-On Delay Time ––– 5.9 ––– tr Rise Time ––– 7.8 ––– td(off) Turn-Off Delay Time ––– 5.8 ––– ns tf Fall Time ––– 15 ––– Ciss Input Capacitance ––– 1411 ––– Coss Output Capacitance ––– 193 ––– Crss Reverse Transfer Capacitance ––– 40 ––– pF Coss Output Capacitance ––– 1557 ––– Coss Output Capacitance ––– 93 ––– Coss eff. Effective Output Capacitance ––– 175 ––– Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 28 (Body Diode) A ISM Pulsed Source Current ––– ––– 39 (Body Diode) Ã VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 62 ––– ns Qrr Reverse Recovery Charge ––– 164 ––– nC VDD = 75V ID = 5.6A RG = 6.0Ω VGS = 20V VGS = -20V Conditions VDS = 50V, ID = 5.6A TJ = 25°C, IS = 5.6A, VGS = 0V f TJ = 25°C, IF = 5.6A, VDD = 25V di/dt = 100A/μs f Conditions VGS = 0V, ID = 250μA Reference to 25°C, ID = 1mA VGS = 10V, ID = 5.6A f VDS = VGS, ID = 100μA VDS = 150V, VGS = 0V VDS = 120V, VGS = 0V, TJ = 125°C MOSFET symbol showing the integral reverse p-n junction diode. Conditions VGS = 10V f VGS = 0V VDS = 25V ƒ = 1.0MHz VGS = 0V, VDS = 0V to 120V g VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz VGS = 0V, VDS = 120V, ƒ = 1.0MHz |
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