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IRGB4055PBF Datasheet(PDF) 1 Page - International Rectifier |
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IRGB4055PBF Datasheet(HTML) 1 Page - International Rectifier |
1 / 10 page www.irf.com 1 03/16/07 Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP applications. Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications l Low VCE(on) and Energy per Pulse (EPULSETM) for improved panel efficiency l High repetitive peak current capability l Lead Free package PDP TRENCH IGBT VCE min 300 V VCE(ON) typ. @ 110A 1.70 V IRP max @ TC= 25°C c 270 A TJ max 150 °C Key Param eters IRGB4055PbF IRGS4055PbF E C G n-channel GC E Gate Collector Emitter D2Pak IRGS4055DPbF E C G C TO-220 IRGB4055DPbF C E C G Absolute Maximum Ratings Parameter Units VGE Gate-to-Emitter Voltage V IC @ TC = 25°C Continuous Collector Current, VGE @ 15V IC @ TC = 100°C Continuous Collector, VGE @ 15V IRP @ TC = 25°C Repetitive Peak Current c PD @TC = 25°C Power Dissipation PD @TC = 100°C Power Dissipation Linear Derating Factor W/°C TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature for 10 seconds Mounting Torque, 6-32 or M3 Screw N Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case d ––– 0.50 RθCS Case-to-Sink, Flat Greased Surface , TO-220 0.50 ––– RθJA Junction-to-Ambient, TO-220 d ––– 62 RθJA Junction-to-Ambient (PCB Mount) , D2Pak d ––– 40 A °C/W W °C 270 300 -40 to + 150 10lb xin (1.1Nxm) 255 102 2.04 Max. 60 110f ±30 PD - 97058B |
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