www.irf.com

1

03/16/07

Description

This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes

which improve panel efficiency. Additional features are 150°C operating junction temperature and high

repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust

and reliable device for PDP applications.

Features

l

Advanced Trench IGBT Technology

l

Optimized for Sustain and Energy Recovery

circuits in PDP applications

l

for improved panel efficiency

l

High repetitive peak current capability

l

Lead Free package

PDP TRENCH IGBT

300

V

1.70

V

270

A

150

°C

Key Param eters

IRGB4055PbF

IRGS4055PbF

E

C

G

n-channel

GC

E

Gate

Collector

Emitter

IRGS4055DPbF

E

C

G

C

TO-220

IRGB4055DPbF

C

E

C

G

Absolute Maximum Ratings

Parameter

Units

Gate-to-Emitter Voltage

V

Repetitive Peak Current c

Power Dissipation

Power Dissipation

Linear Derating Factor

W/°C

Operating Junction and

Storage Temperature Range

Soldering Temperature for 10 seconds

Mounting Torque, 6-32 or M3 Screw

N

Thermal Resistance

Parameter

Typ.

Max.

Units

Junction-to-Case d

–––

0.50

Case-to-Sink, Flat Greased Surface , TO-220

0.50

–––

Junction-to-Ambient, TO-220

d

–––

62

–––

40

A

°C/W

W

°C

270

300

-40 to + 150

10lb

xin (1.1Nxm)

255

102

2.04

Max.

60

110f

±30

PD - 97058B