TPCP8F01

2006-11-13

1

TOSHIBA Multi-chip Device

Silicon PNP Epitaxial Transistor , Field Effect Transistor Silicon N Channel MOS Type

TPCP8F01

○

Swtching Applications

○

Load Switch Applications

○

Multi-chip discrete device; built-in PNP Transistor for

main switch and N-ch MOS FET for drive

(PNP Transistor)

(PNP Transistor)

Transistor

Characteristics

Symbol

Rating

Unit

Collector-base voltage

−30

V

Collector-emitter voltage

−20

V

Emitter-base voltage

−7

V

DC

−3.0

Collector current

Pulse

−5.0

A

Base current

−250

mA

Collector power dissipation

1.0

W

Junction temperature

150

°C

MOS FET

Characteristics

Symbol

Rating

Unit

Drain-source voltage

20

V

Gate-source voltage

±10

V

DC

100

Drain current

Pulse

200

mA

Channel temperature

150

°C

Note 1: Mounted on FR4 board (glass epoxy, 1.6mm thick, Cu area: 645mm

Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Unit: mm

0.33±0.05

-0.11

-0.12

0.475

0.65

A

2.9±0.1

4

1

5

8

0.8±0.05

0.17±0.02

B

B

A

S

0.025

S

-0.12

-0.11

JEDEC

―

JEITA

―

TOSHIBA

2-3V1B

Weight : 0.017g (Typ.)

1.Source

2.Collector

3.Collector

4.Collector

5.Emitter

6.Base

7.Gate

8.Drain