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TPCS8204 Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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TPCS8204 Datasheet(HTML) 4 Page - Toshiba Semiconductor |
4 / 7 page TPCS8204 2007-01-16 4 ID – VDS ID – VDS ID – VGS VDS – VGS |Yfs| – ID RDS (ON) – ID Drain-source voltage VDS (V) Drain-source voltage VDS (V) Gate-source voltage VGS (V) Gate-source voltage VGS (V) Drain current ID (A) Drain current ID (A) 0 Common source Ta = 25°C Pulse test 0 2 4 6 8 10 0.2 0.4 0.8 3 6 ID = 1.5 A 12 0.6 0 Common source Ta = 25°C, Pulse test VGS = 1.2 V 1.3 1.4 1.5 2 4, 5 0 0.4 0.8 1.2 1.6 2.0 1 2 3 4 5 0 Common source Ta = 25°C Pulse test VGS = 1.2 V 1.3 1.4 1.5 2 4, 5 0 123 4 5 2 4 6 8 10 1.7 1.6 0 Common source VDS = 10 V Pulse test 0 1 2 3 4 5 2 4 6 8 10 Ta = −55°C 100 25 1 Common source VDS = 10 V Pulse test 0.1 1 10 10 100 Ta = −55°C 25 100 1 Common source Ta = 25°C Pulse test 0.1 1 10 10 100 VGS = 2 V 2.5 4 |
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