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TPD1018F Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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TPD1018F Datasheet(HTML) 3 Page - Toshiba Semiconductor |
3 / 8 page TPD1018F 2006-10-31 3 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source Voltage VDS 60 V DC VDD (1) 25 V Supply Voltage Pulse VDD (2) 60 (Rs = 1Ω, τ = 250ms) V DC VIN (1) -0.5~25 V Input Voltage Pulse VIN (2) VDD (1) + 1.5 (t = 100ms) V Output Current IO 0.5 A Input Current IIN ±10 mA Power Dissipation PD 300 mW Operating Temperature Topr -40~125 °C Junction Temperature Tj 150 °C Storage Temperature Tstg -55~150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Tj = -40~125°C) Characteristics Symbol Test Circuit Test Condition Min Typ. Max Unit Operating Supply Voltage VDD (opr) ― ― 5 12 25 V IDD (1) VDD = 13.2V, VIN = 0V, Tj = 85°C ― 120 300 μA Supply Current IDD (2) ― VDD = 13.2V, VIN = 5V ― 1 1.5 mA VIH ― VDD = 13.2V, IO = 300mA 3.5 ― ― V Input Voltage VIL ― VDD = 13.2V, IO = 100μA ― ― 1.5 V IIN (1) VDD = 13.2V, VIN = 5V ― 10 100 μA Input Current IIN (2) ― VDD = 13.2V, VIN = 0V -0.2 ― 0.2 μA On-voltage VDS (ON) ― VDD = 13.2V, IO = 300mA, Tj = 25°C ― 0.21 0.24 V RDS (ON)(1) VDD = 13.2V, IO = 300mA, Tj = 25°C ― 0.7 0.8 Ω On-resistance RDS (ON)(2) ― VDD = 13.2V, IO = 300mA, Tj = -40~85°C ― ― 1.2 Ω Diagnosis Output Voltage “L” Level VDL ― VDD = 13.2V, IDL = 1mA ― ― 0.4 V Diagnosis Output Current “H” Level IDH ― VDD = 25V, IDH = 25V ― ― 10 μA Output Leakage Current IOL ― VDD = 25V, VIN = 0V ― ― 100 μA Overcurrent Protection IS ― VDD = 13.2V, Tj = 25°C 0.5 ― 3 A Temperature TS 150 160 200 °C Thermal Shutdown Hysteresis ΔTS ― ― ― 20 50 °C Voltage VDDS ― 25 ― ― V Overvoltage Protection Hysteresis ΔVDDS ― ― ― 2 7 V tON ― 50 ― μs Switching Time tOFF 1 VDD = 13.2V, RL = 40Ω Tj = 25°C ― 10 ― μs |
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