RDD050N20

Transistors

2/5

Electrical characteristics (Ta=25

°C)

Parameter

Symbol

Max.

Typ.

Unit

Conditions

Gate-Source Leakage

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate Threshold Voltage

Forward Transfer Admittance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Min.

⎯

200

⎯

2.0

⎯

1.1

⎯

⎯

⎯

⎯

⎯

⎯

⎯

⎯

⎯

⎯

=10V

=0V

f

=1MHz

=10V

=40Ω

=10Ω

=100V

=10V

=5A

⎯

⎯

⎯

⎯

0.55

1.8

292

92

28

10

22

23

28

9.3

2.8

3.7

µA

V

µA

V

Ω

S

pF

pF

pF

ns

ns

ns

ns

nC

nC

nC

±10

⎯

25

4.0

0.72

⎯

⎯

⎯

⎯

⎯

⎯

⎯

⎯

⎯

⎯

⎯

Static Drain-Source On-State

Resistance

∗ Pulsed

∗

∗

∗

∗

∗

∗

∗

∗

∗

Body diode characteristics (Source-drain) (Ta=25

°C)

−−

1.5

V

Forward voltage

−

117

−

ns

di/dt= 100A /

µs

Reverse recovery time

−

0.37

−µC

Reverse recovery charge

∗ Pulsed

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

∗