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S29GL032M10BAIR13 Datasheet(PDF) 1 Page - SPANSION |
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S29GL032M10BAIR13 Datasheet(HTML) 1 Page - SPANSION |
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1 / 160 page  Publication Number S29GLxxxM_00 Revision A Amendment 5 Issue Date April 30, 2004 PRELIMINARY S29GLxxxM MirrorBitTM Flash Family S29GL256M, S29GL128M, S29GL064M, S29GL032M 256 Megabit, 128 Megabit, 64 Megabit, and 32Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology Datasheet Distinctive Characteristics Architectural Advantages Single power supply operation — 3 volt read, erase, and program operations Manufactured on 0.23 um MirrorBit process technology SecSi™ (Secured Silicon) Sector region — 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number, accessible through a command sequence — May be programmed and locked at the factory or by the customer Flexible sector architecture — 256Mb: 512 32 Kword (64 Kbyte) sectors — 128Mb: 256 32 Kword (64 Kbyte) sectors — 64Mb (uniform sector models): 128 32 Kword (64 Kbyte) sectors or 128 32 Kword sectors — 64Mb (boot sector models): 127 32 Kword (64 Kbyte) sectors + 8 4Kword (8Kbyte) boot sectors — 32Mb (uniform sector models): 64 32Kword (64 Kbyte) sectors of 64 32Kword sectors — 32Mb (boot sector models): 63 32Kword (64 Kbyte) sectors + 8 4Kword (8Kbyte) boot sectors Compatibility with JEDEC standards — Provides pinout and software compatibility for single- power supply flash, and superior inadvertent write protection 100,000 erase cycles typical per sector 20-year data retention typical Performance Characteristics High performance — 90 ns access time (128Mb, 64Mb, 32Mb), 100 ns access time (256Mb) — 4-word/8-byte page read buffer — 25 ns page read times (128Mb, 64Mb, 32Mb) — 30 ns page read times (256Mb) — 16-word/32-byte write buffer — 16-word/32-byte write buffer reduces overall programming time for multiple-word updates Low power consumption (typical values at 3.0 V, 5 MHz) — 18 mA typical active read current (64 Mb, 32 Mb) — 25 mA typical active read current (256 Mb, 128 Mb) — 50 mA typical erase/program current — 1 µA typical standby mode current Package options — 40-pin TSOP — 48-pin TSOP — 56-pin TSOP — 64-ball Fortified BGA — 48-ball fine-pitch BGA — 63-ball fine-pitch BGA Software & Hardware Features Software features — Program Suspend & Resume: read other sectors before programming operation is completed — Erase Suspend & Resume: read/program other sectors before an erase operation is completed — Data# polling & toggle bits provide status — CFI (Common Flash Interface) compliant: allows host system to identify and accommodate multiple flash devices — Unlock Bypass Program command reduces overall multiple-word programming time Hardware features — Sector Group Protection: hardware-level method of preventing write operations within a sector group — Temporary Sector Unprotect: VID-level method of charging code in locked sectors — WP#/ACC input accelerates programming time (when high voltage is applied) for greater throughput during system production. Protects first or last sector regardless of sector protection settings on uniform sector models — Hardware reset input (RESET#) resets device — Ready/Busy# output (RY/BY#) detects program or erase cycle completion |
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