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S2387 Datasheet(PDF) 2 Page - Hamamatsu Corporation |
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S2387 Datasheet(HTML) 2 Page - Hamamatsu Corporation |
2 / 4 page Si photodiode S2387 series AMBIENT TEMPERATURE (˚C) (Typ. VR=10 mV) 100 k Ω 1 M Ω 10 M Ω 100 M Ω 1 G Ω 10 T Ω -20 0 20 40 60 S2387-16R/33R S2387-130R S2387-1010R 80 10 G Ω 100 G Ω 1 T Ω 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 200 400 600 800 1000 WAVELENGTH (nm) (Typ. Ta=25 ˚C) s Spectral response s Photo sensitivity temperature characteristic KSPDB0115EA KSPDB0058EB KSPDB0116EA KSPDB0117EA -0.5 0 +0.5 +1.0 +1.5 200 400 600 800 1000 WAVELENGTH (nm) (Typ.) s Rise time vs. load resistance s Dark current vs. reverse voltage s Shunt resistance vs. ambient temperature KSPDB0118EA LOAD RESISTANCE ( Ω) (Typ. Ta=25 ˚C, VR=0 V) 10 ns 100 ns 1 µs 10 µs 100 µs 1 ms 102 103 104 105 S2387-16R/33R S2387-130R S2387-1010R REVERSE VOLTAGE (V) (Typ. Ta=25 ˚C) 10 fA 100 fA 1 pA 10 pA 100 pA 1 nA 0.01 0.1 1 10 100 S2387-16R/33R S2387-66R S2387-1010R S2387-130R 2 |
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