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S2386-5K Datasheet(PDF) 2 Page - Hamamatsu Corporation |
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S2386-5K Datasheet(HTML) 2 Page - Hamamatsu Corporation |
2 / 4 page Si photodiode S2386 series 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 200 400 600 800 1000 WAVELENGTH (nm) (Typ. Ta=25 ˚C) s s s s s Spectral response s s s s s Photo sensitivity temperature characteristic KSPDB0110EA -0.5 0 +0.5 +1.0 +1.5 200 400 600 800 1000 WAVELENGTH (nm) (Typ.) KSPDB0058EB 90˚ 80˚ 70˚ 60˚ 50˚ 30˚ RELATIVE SENSITIVITY 40˚ 90˚ 80˚ 70˚ 60˚ 50˚ 30˚ 40˚ 20˚ 10˚ 0˚ 10˚ 20˚ 80 % 100 % 20% 40 % 60 % S2386-18K S2386-18L s Directivity s Rise time vs. load resistance KSPDB0111EA LOAD RESISTANCE ( Ω) (Typ. Ta=25 ˚C, VR=0 V) 10 ns 100 ns 1 µs 10 µs 100 µs 1 ms 102 103 104 105 S2386-18K S2386-5K S2386-44K S2386-8K S2386-45K KSPDB0112EA 2 |
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