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S5870 Datasheet(PDF) 2 Page - Hamamatsu Corporation |
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S5870 Datasheet(HTML) 2 Page - Hamamatsu Corporation |
2 / 2 page HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K. Si PIN photodiode S5980, S5981, S5870 Cat. No. KPIN1012E02 Aug. 2006 DN 0.03 a b d c ANODE b NC CATHODE COMMON NC ANODE c ANODE d NC NC NC ANODE a DETAILS OF ACTIVE AREA (4 ×) R0.3 2.54 (10 ×) 1.2 14.5 ± 0.2 Burrs shall protrude no more than 0.3 mm on any side of package. ACTIVE AREA PHOTOSENSITIVE SURFACE SILICONE RESIN 0.03 ab NC ANODE a CATHODE COMMON ANODE b NC NC NC NC NC NC DETAILS OF ACTIVE AREA (4 ×) R0.3 2.54 (10 ×) 1.2 14.5 ± 0.2 Burrs shall protrude no more than 0.3 mm on any side of package. ACTIVE AREA PHOTOSENSITIVE SURFACE SILICONE RESIN 8.8 ± 0.2 (4 ×) R0.3 1.27 0.03 a b d c (10 ×) 0.6 SILICONE RESIN Burrs shall protrude no more than 0.3 mm on any side of package. ANODE b NC CATHODE COMMON NC ANODE c ANODE d NC NC NC ANODE a PHOTOSENSITIVE SURFACE DETAILS OF ACTIVE AREA ACTIVE AREA 0.6 0.5 0.4 0.3 0.1 200 400 600 800 1000 WAVELENGTH (nm) 0.7 0.8 (Typ. Ta=25 ˚C) 0.2 s Spectral response s Dimensional outlines (unit: mm) KMPDA0036EA 0 190 400 600 800 1000 +1.0 +0.5 (Typ. ) +1.5 -0.5 WAVELENGTH (nm) s Photo sensitivity temperature characteristic REVERSE VOLTAGE (V) 100 pA 10 nA 1 nA 10 pA 1 pA 0.01 0.1 1 10 100 (Typ. Ta=25 ˚C) S5980 S5981 S5870 s Dark current vs. reverse voltage REVERSE VOLTAGE (V) (Typ. Ta=25 ˚C, f=1 MHz) 1 nF 10 pF 1 pF 100 fF 0.1 110 100 100 pF S5981 S5870 S5980 s Terminal capacitance vs. reverse voltage KMPDB0125EA KMPDA0113EA KMPDA0037EA KMPDB0122EA KMPDB0123EA KMPDB0124EA S5980 S5870 S5981 2 |
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