HAMAMATSU PHOTONICS K.K., Solid State Division

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Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.

Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K.

Si PIN photodiode

S5980, S5981, S5870

Cat. No. KPIN1012E02

Aug. 2006 DN

0.03

a

b

d

c

ANODE b

NC

CATHODE COMMON

NC

ANODE c

ANODE d

NC

NC

NC

ANODE a

DETAILS OF

ACTIVE AREA

(4

2.54

(10

14.5 ± 0.2

Burrs shall protrude no more than 0.3 mm on

any side of package.

ACTIVE AREA

PHOTOSENSITIVE

SURFACE

SILICONE

RESIN

0.03

ab

NC

ANODE a

CATHODE COMMON

ANODE b

NC

NC

NC

NC

NC

NC

DETAILS OF

ACTIVE AREA

(4

2.54

(10

14.5 ± 0.2

Burrs shall protrude no more than 0.3 mm on

any side of package.

ACTIVE AREA

PHOTOSENSITIVE

SURFACE

SILICONE

RESIN

8.8 ± 0.2

(4

1.27

0.03

a

b

d

c

(10

SILICONE

RESIN

Burrs shall protrude no more than 0.3 mm on

any side of package.

ANODE b

NC

CATHODE COMMON

NC

ANODE c

ANODE d

NC

NC

NC

ANODE a

PHOTOSENSITIVE

SURFACE

DETAILS OF

ACTIVE AREA

ACTIVE AREA

0.6

0.5

0.4

0.3

0.1

200

400

600

800

1000

0.7

0.8

(Typ. Ta=25 ˚C)

0.2

s Spectral response

s Dimensional outlines (unit: mm)

KMPDA0036EA

0

190

400

600

800

1000

+1.0

+0.5

(Typ. )

+1.5

-0.5

s Photo sensitivity temperature characteristic

REVERSE VOLTAGE (V)

100 pA

10 nA

1 nA

10 pA

1 pA

0.01

0.1

1

10

100

(Typ. Ta=25 ˚C)

S5980

S5981

S5870

s Dark current vs. reverse voltage

REVERSE VOLTAGE (V)

(Typ. Ta=25 ˚C, f=1 MHz)

1 nF

10 pF

1 pF

100 fF

0.1

110

100

100 pF

S5981

S5870

S5980

s Terminal capacitance vs. reverse voltage

KMPDB0125EA

KMPDA0113EA

KMPDA0037EA

KMPDB0122EA

KMPDB0123EA

KMPDB0124EA

S5980

S5870

S5981

2