Back-thinned TDI-CCD

S10200-02, S10201-04, S10202-08, S10202-16

4

s Operating conditions (TDI mode, Ta=25

°C)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Output transistor drain voltage

12

15

18

V

Reset drain voltage

11

12

13

V

Output gate voltage

35

7

V

Substrate voltage

-

0

-

V

Overflow drain voltage

4

6

9

V

Overflow gate voltage

0

4

6

V

High

46

8

Vertical shift register

clock voltage

Low

-6

-5

-4

V

High

4

6

8

Horizontal shift register

clock voltage

Low

-6

-5

-4

V

High

4

6

8

Summing gate voltage

Low

-6

-5

-4

V

High

7

8

9

Reset gate voltage

Low

-6

0

-

V

High

4

6

8

Transfer gate voltage

Low

-6

-5

-4

V

s Electrical and optical characteristics (Ta=25

°C)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Saturation output voltage

Vsat

-

FW × Sv

-

V

FW

100

120

140

ke-

CCD node sensitivity

Sv

3

3.5

4

µV/e-

DS

-

100

300

e-/pixel

Readout noise

Nr

-

100

200

e- rms

Dynamic range

DR

-

1200

-

-

PRNU

-

±3

±10

%

Spectral response range

λ

-

200 to 1100

-

nm

*1: TDI mode

*2: Line rate 50 kHz, accumulated dark signal after 128-stage transfer

*3: Readout frequency 30 MHz

*4: Measured at one-half of the full well. In TDI mode.

s Electrical characteristics (Ta=25

°C)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Signal output frequency

fc

-

30

40

MHz

Reset clock frequency

frg

-

30

40

MHz

S10200-02

-

250

-

S10201-04

-

400

-

Vertical shift register

capacitance

S10202-08/-16

-

650

-

pF

S10200-02

-

50

-

S10201-04

-

50

-

S10202-08

-

50

-

Line rate

S10202-16

LR

-

100

-

kHz

S10200-02

-

50

-

S10201-04

-

90

-

Horizontal shift register

capacitance

S10202-08/-16

-90

-

pF

S10200-02

-

40

-

S10201-04

-

60

-

Transfer gate capacitance

S10202-08/-16

-

100

-

pF

S10200-02

-

20

-

S10201-04

-

40

-

Summing gate capacitance

S10202-08/-16

-40

-

pF

S10200-02

-

20

-

S10201-04

-

40

-

Reset gate capacitance

S10202-08/-16

-

40

-

pF

CTE

0.99995

0.99999

-

-

Vout

-

6.5

-

V

Zo

-

300

-

Ω

Output MOSFET supply current/node

Ido

-

5

10

mA

P-

75

-

mW

*5: Charge transfer efficiency per pixel, measured at half of the full well capacity.

Ω

*7: Power consumption of the on-chip amplifier plus load resistance.