2SC3422_06 datasheet(3/4 Pages) TOSHIBA

Part #	2SC3422

Description	Silicon NPN Epitaxial Type (PCT Process) Audio Frequency Power Amplifier

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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3 / 4 page

2SC3422

2006-11-09

3

Collector-emitter voltage VCE (V)

Collector current IC (A)

hFE – IC

Base-emitter voltage VBE (V)

IC – VBE

Collector current IC (A)

VCE (sat) – IC

Ambient temperature Ta (°C)

PC – Ta

Safe Operating Area

Collector-emitter voltage VCE (V)

IC – VCE

1

3

10

30

0.1

0.3

1

3

5

*: Single nonrepetitive

pulse Tc = 25°C

Curves must be derated

linearly with increase in

temperature

0.5

10

100

IC max (pulsed)*

IC max (continuous)*

VCEO max

1 ms*

10 ms*

500 ms*

DC operation

Tc = 25°C

0

Common emitter

Tc = 25°C

3.2

1.2

2.4

3.2

5.6

4.0

100

40

30

80

20

IB = 10 mA

0

60

1.6

0.8

0.4

0.8

1.6

2.0

2.4

2.8

4.8

−25

Common emitter

VCE = 2 V

0

2.8

0

0.8

1.2

0.4

0.6

Tc = 100°C

25

1.8

0.8

0.2

0.4

1.6

2.0

1.0

1.2

1.4

1.6

2.4

(1) Ta = Tc Infinite heat sink

(2) No heat sink

0

40

60

100

80

20

12

0

4

2

6

(1)

(2)

120

140

160

8

10

25

0.03

300

Common emitter

VCE = 2 V

20

50

100

1000

0.1

0.3

3

Tc = 100°C

−25

1

0.01

500

−25

Common emitter

IC/IB = 10

1

0.05

0.1

0.3

Tc = 100°C

25

0.03

0.1

0.3

3

1

0.01

0.5

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