2SC3437 datasheet(2/5 Pages) TOSHIBA

Part #	2SC3437

Description	Silicon NPN Epitaxial Type (PCT process) Ultra High Speed Switching Applications

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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2 / 5 page

2SC3437

2007-11-01

2

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

ICBO

VCB = 40 V, IE = 0

⎯

0.1

μA

Emitter cut-off current

IEBO

VEB = 5 V, IC = 0

⎯

0.1

μA

hFE (1)

(Note)

VCE = 1 V, IC = 10 mA

40

⎯

240

DC current gain

hFE (2)

VCE = 1 V, IC = 100 mA

20

⎯

Collector-emitter saturation voltage

VCE (sat)

IC = 20 mA, IB = 1 mA

⎯

0.3

V

Base-emitter saturation voltage

VBE (sat)

IC = 20 mA, IB = 1 mA

⎯

1.0

V

Transition frequency

fT

VCE = 10 V, IC = 10 mA

200

400

⎯

MHz

Collector output capacitance

Cob

VCB = 10 V, IE = 0, f = 1 MHz

⎯

4

6

pF

Turn-on time

ton

⎯

70

⎯

Storage time

tstg

⎯

15

⎯

Switching time

Fall time

tf

Duty cycle <= 2%

⎯

30

⎯

ns

Note: hFE (1) classification R: 40~80, O: 70~140, Y: 120~240

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