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2SC5122 Datasheet(HTML) 2 Page - Toshiba Semiconductor

Part No. 2SC5122
Description  Silicon NPN Triple Diffused Type
Download  4 Pages
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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2SC5122 Datasheet(HTML) 2 Page - Toshiba Semiconductor

   
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2SC5122
2006-11-10
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 400 V, IE = 0
1
μA
Emitter cut-off current
IEBO
VEB = 7 V, IC = 0
1
μA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 1 mA, IB = 0
400
V
hFE (1)
VCE = 5 V, IC = 1 mA
80
DC current gain
hFE (2)
VCE = 5 V, IC = 20 mA
100
300
Collector-emitter saturation voltage
VCE (sat)
IC = 20 mA, IB = 0.5 mA
0.4
1.0
V
Base-emitter voltage
VBE
VCE = 5 V, IC = 20 mA
0.7
1.0
V
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
4
pF
Marking
C5122
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)


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