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2SC5196 Datasheet(HTML) 1 Page - Toshiba Semiconductor

Part No. 2SC5196
Description  Silicon NPN Triple Diffused Type Power Amplifier Applications
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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2SC5196 Datasheet(HTML) 1 Page - Toshiba Semiconductor

   
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2SC5196
2006-11-10
1
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5196
Power Amplifier Applications
• Complementary to 2SA1939
• Suitable for use in 40-W high fidelity audio amplifier’s output stage
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
80
V
Collector-emitter voltage
VCEO
80
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
6
A
Base current
IB
0.6
A
Collector power dissipation
(Tc = 25°C)
PC
60
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC
JEITA
TOSHIBA
2-16C1A
Weight: 4.7 g (typ.)


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