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2SC6010 Datasheet(PDF) 4 Page - Toshiba Semiconductor

Part No. 2SC6010
Description  Silicon NPN Triple Diffused Type
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SC6010 Datasheet(HTML) 4 Page - Toshiba Semiconductor

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2SC6010
2006-11-13
4
rth – tw
Collector-emitter voltage VCE (V)
Safe Operating Area
Pulse width tw (s)
Collector current IC (A)
Switching Characteristics – IC
10
1000
1
0.001
1000
0.01
0.1
1
10
100
10
100
Curves should be applied in thermal
limited area. (single nonrepetitive pulse)
Ta=25℃
0.001
10
1 ms*
10 ms*
VCEO max
100 μs*
100 ms*
IC max (Pulse)*
1
100
1000
10
0.1
1
0.01
10 μs*
DC operation
Ta = 25°C
*:Single nonrepetitive pulse
Ta = 25°C
Curves
must
be
derated
linearly
with
increase
in
temperature.
5
0.1
0.1
0.3
0.5
1
3
5
1
3
0.3
0.5
tstg
tf
IC = 8IB1
2IB1 = −IB2
VCC ≈ 200 V
Pulse width = 20μs
Duty cycle
≤ 1%
Ta = 25°C
Ambient temperature Ta (°C)
PC – Ta
0
0
40
80
120
160
200
0.2
0.4
0.8
1.0
1.2
0.6


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