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2SC6010 Datasheet(PDF) 1 Page - Toshiba Semiconductor

Part No. 2SC6010
Description  Silicon NPN Triple Diffused Type
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SC6010 Datasheet(HTML) 1 Page - Toshiba Semiconductor

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2SC6010
2006-11-13
1
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC6010
High Voltage Switching Applications
Switching Regulator Applications
DC-DC Converter Applications
• High speed switching: tf = 0.24μs (max) (IC = 0.3A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
600
V
Collector-emitter voltage
VCEX
600
V
Collector-emitter voltage
VCEO
285
V
Emitter-base voltage
VEBO
8
V
DC
IC
1.0
Collector current
Pulse
ICP
2.0
A
Base current
IB
0.5
A
Collector power
dissipation
Ta = 25°C
PC
1.0
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-7D101A
Weight:
g (typ.)
Base
Collector
Emitter
1.
2.
3.


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