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2SC6010 Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part No. 2SC6010
Description  Silicon NPN Triple Diffused Type
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SC6010 Datasheet(HTML) 2 Page - Toshiba Semiconductor

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2SC6010
2006-11-13
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 600 V, IE = 0
100
μA
Emitter cut-off current
IEBO
VEB = 8 V, IC = 0
100
μA
Collector-base breakdown voltage
V (BR) CBO
IC = 1 mA, IB = 0
600
V
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
285
V
hFE (1)
VCE = 5 V, IC = 1 mA
80
200
hFE (2)
VCE = 5 V, IC = 0.1 A
100
200
DC current gain
hFE (3)
VCE = 5 V, IC = 0.2 A
60
Collector emitter saturation voltage
VCE (sat)
IC = 0.6 A, IB = 75 mA
1.0
V
Base-emitter saturation voltage
VBE (sat)
IC = 0.6 A, IB = 75 mA
1.3
V
Rise time
tr
0.4
Storage time
tstg
3.0
Switching time
Fall time
tf
IB1 = 20 mA, −IB2 = 50 mA
DUTY CYCLE ≤ 1%
0.24
μs
Marking
20 μs
VCC ≈ 200 V
INPUT
OUT-
PUT
IB21
IB1
IB2
IC
C6010
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)


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