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2SC6010 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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2SC6010 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
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2 / 5 page  2SC6010 2006-11-13 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 600 V, IE = 0 ― ― 100 μA Emitter cut-off current IEBO VEB = 8 V, IC = 0 ― ― 100 μA Collector-base breakdown voltage V (BR) CBO IC = 1 mA, IB = 0 600 ― ― V Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 285 ― ― V hFE (1) VCE = 5 V, IC = 1 mA 80 ― 200 hFE (2) VCE = 5 V, IC = 0.1 A 100 ― 200 DC current gain hFE (3) VCE = 5 V, IC = 0.2 A 60 ― ― Collector emitter saturation voltage VCE (sat) IC = 0.6 A, IB = 75 mA ― ― 1.0 V Base-emitter saturation voltage VBE (sat) IC = 0.6 A, IB = 75 mA ― ― 1.3 V Rise time tr ― ― 0.4 Storage time tstg ― ― 3.0 Switching time Fall time tf IB1 = 20 mA, −IB2 = 50 mA DUTY CYCLE ≤ 1% ― ― 0.24 μs Marking 20 μs VCC ≈ 200 V INPUT OUT- PUT IB21 IB1 IB2 IC C6010 Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Part No. (or abbreviation code) |
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