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2SJ201 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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2SJ201 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 5 page 2SJ201 2006-11-16 1 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ201 High-Power Amplifier Application High breakdown voltage : VDSS = −200 V High forward transfer admittance : |Yfs| = 5.0 S (typ.) Complementary to 2SK1530 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage VDSS −200 V Gate−source voltage VGSS ±20 V Drain current (Note 1) ID −12 A Drain power dissipation (Tc = 25°C) PD 150 W Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Unit: mm JEDEC ― JEITA ― TOSHIBA 2-21F1B Weight: 9.75 g (typ.) |
Similar Part No. - 2SJ201_07 |
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Similar Description - 2SJ201_07 |
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