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2SJ312 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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2SJ312 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 6 page 2SJ312 2006-11-16 1 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L 2 −π−MOSIV) 2SJ312 DC−DC Converter, Relay Drive and Motor Drive Applications 4-V gate drive Low drain−source ON resistance : RDS (ON) = 80 mΩ (typ.) High forward transfer admittance : |Yfs| = 8.0 S (typ.) Low leakage current : IDSS = −100 μA (max) (VDS = −60 V) Enhancement mode : Vth = −0.8~−2.0 V (VDS = −10 V, ID = −1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage VDSS −60 V Drain−gate voltage (RGS = 20 kΩ) VDGR −60 V Gate−source voltage VGSS ±20 V DC (Note 1) ID −14 Drain current Pulse(Note 1) IDP −56 A Drain power dissipation (Tc = 25°C) PD 40 W Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case Rth (ch−c) 3.125 °C / W Thermal resistance, channel to ambient Rth (ch−a) 83.3 °C / W Note 1: Ensure that the channel temperature does not exceed 150°C. This transistor is an electrostatic-sensitive device. Please handle with caution. Unit: mm JEDEC ― JEITA ― TOSHIBA 2-10S1B Weight: 1.5 g (typ.) JEDEC ― JEITA ― TOSHIBA 2-10S2B Weight: 1.5 g (typ.) |
Similar Part No. - 2SJ312_07 |
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Similar Description - 2SJ312_07 |
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