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2SJ439 Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part # 2SJ439
Description  DC/DC Converter, Relay Drive and Motor Drive Applications
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SJ439 Datasheet(HTML) 2 Page - Toshiba Semiconductor

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2SJ439
2006-11-16
2
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±6.5 V, VDS = 0 V
±10
μA
Drain cutoff current
IDSS
VDS = −16 V, VGS = 0 V
−100
μA
Drain−source breakdown voltage
V (BR) DSS
ID = −10 mA, VGS = 0 V
−16
V
Gate threshold voltage
Vth
VDS = −10 V, ID = −1 mA
−0.5
−1.1
V
VGS = −2.5 V, ID = −2.5 A
0.18
0.28
Drain−source ON-resistance
RDS (ON)
VGS = −4 V, ID = −2.5 A
0.14
0.2
Forward transfer admittance
|Yfs|
VDS = −10 V, ID = −2.5 A
3.0
6.0
S
Input capacitance
Ciss
1050
Reverse transfer capacitance
Crss
120
Output capacitance
Coss
VDS = −10 V, VGS = 0 V, f = 1 MHz
460
pF
Rise time
tr
80
Turn−on time
ton
100
Fall time
tf
250
Switching time
Turn−off time
toff
550
ns
Total gate charge
(Gate−source plus gate−drain)
Qg
24
Gate−source charge
Qgs
16
Gate−drain (“Miller”) charge
Qgd
VDD ≈ −16 V, VGS = −5 V, ID = −5 A
8
nC
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
−5
A
Pulse drain reverse current
(Note 1)
IDRP
−20
A
Forward voltage (diode)
VDSF
IDR = −5 A, VGS = 0 V
1.7
V
Reverse recovery time
trr
120
ns
Reverse recovery charge
Qrr
IDR = −5 A, VGS = 0 V,dlDR / dt = 50 A / μs
0.12
μC
Marking
J439
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)


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