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2SJ439 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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2SJ439 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 6 page 2SJ439 2006-11-16 2 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±6.5 V, VDS = 0 V — — ±10 μA Drain cutoff current IDSS VDS = −16 V, VGS = 0 V — — −100 μA Drain−source breakdown voltage V (BR) DSS ID = −10 mA, VGS = 0 V −16 — — V Gate threshold voltage Vth VDS = −10 V, ID = −1 mA −0.5 — −1.1 V VGS = −2.5 V, ID = −2.5 A — 0.18 0.28 Drain−source ON-resistance RDS (ON) VGS = −4 V, ID = −2.5 A — 0.14 0.2 Ω Forward transfer admittance |Yfs| VDS = −10 V, ID = −2.5 A 3.0 6.0 — S Input capacitance Ciss — 1050 — Reverse transfer capacitance Crss — 120 — Output capacitance Coss VDS = −10 V, VGS = 0 V, f = 1 MHz — 460 — pF Rise time tr — 80 — Turn−on time ton — 100 — Fall time tf — 250 — Switching time Turn−off time toff — 550 — ns Total gate charge (Gate−source plus gate−drain) Qg — 24 — Gate−source charge Qgs — 16 — Gate−drain (“Miller”) charge Qgd VDD ≈ −16 V, VGS = −5 V, ID = −5 A — 8 — nC Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR — — — −5 A Pulse drain reverse current (Note 1) IDRP — — — −20 A Forward voltage (diode) VDSF IDR = −5 A, VGS = 0 V — — 1.7 V Reverse recovery time trr — 120 — ns Reverse recovery charge Qrr IDR = −5 A, VGS = 0 V,dlDR / dt = 50 A / μs — 0.12 — μC Marking J439 Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Part No. (or abbreviation code) |
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