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2SJ508 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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2SJ508 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 6 page 2SJ508 2007-01-16 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V — — ±10 μA Drain cut−off current IDSS VDS = −100 V, VGS = 0 V — — −100 μA Drain−source breakdown voltage V (BR) DSS ID = −10 mA, VGS = 0 V −100 — — V Gate threshold voltage Vth VDS = −10 V, ID = −1 mA −0.8 — −2.0 V VGS = −4 V, ID = −0.5 A — 1.68 2.5 Drain−source ON resistance RDS (ON) VGS = −10 V, ID = −0.5 A — 1.34 1.9 Ω Forward transfer admittance |Yfs| VDS = −10 V, ID = −0.5 A 0.3 0.7 — S Input capacitance Ciss — 135 — Reverse transfer capacitance Crss — 22 — Output capacitance Coss VDS = −10 V, VGS = 0 V, f = 1 MHz — 48 — pF Rise time tr — 20 — Turn−on time ton — 32 — Fall time tf — 25 — Switching time Turn−off time toff — 130 — ns Total gate charge (Gate−source plus gate−drain) Qg — 6.3 — Gate−source charge Qgs — 4.1 — Gate−drain (“miller”) charge Qgd VDD ≈ −80 V, VGS = −10 V, ID = −1 A — 2.2 — nC Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR — — — −1 A Pulse drain reverse current (Note 1) IDRP — — — −3 A Forward voltage (diode) VDSF IDR = −1 A, VGS = 0 V — — 1.5 V Reverse recovery time trr — 90 — ns Reverse recovery charge Qrr IDR = −1 A, VGS = 0 V dIDR / dt = 50 A / μs — 180 — nC |
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