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2SD2012 Datasheet(PDF) 4 Page - Toshiba Semiconductor

Part # 2SD2012
Description  Silicon NPN Triple Diffused Type
Download  5 Pages
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SD2012 Datasheet(HTML) 4 Page - Toshiba Semiconductor

  2SD2012_06 Datasheet HTML 1Page - Toshiba Semiconductor 2SD2012_06 Datasheet HTML 2Page - Toshiba Semiconductor 2SD2012_06 Datasheet HTML 3Page - Toshiba Semiconductor 2SD2012_06 Datasheet HTML 4Page - Toshiba Semiconductor 2SD2012_06 Datasheet HTML 5Page - Toshiba Semiconductor  
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2SD2012
2006-11-21
4
Collector-emitter voltage VCE (V)
Safe Operating Area
Ambient temperature Ta (°C)
PC – Ta
30
0
0
25
20
15
10
5
25
50
75
100
125
150
175
(1) Ta = Tc Infinite heat sink
(2) No heat sink
(1)
(2)
10
1
0.1
0.3
0.5
1
3
5
3
5
10
30
50
100
300
*: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated linearly
with increase in temperature.
IC max (pulsed)*
IC max (continuous)
DC operation
Tc = 25°C
100 ms*
10 ms*
1 ms*
VCEO max
Pulse width tw (s)
rth – tw
(1) No heat sink Ta = 25°C
(2) Infinite heat sink Tc = 25°C
1
10
100
0.3
0.5
3
5
30
50
1
10
100
0.1
0.01
0.001
(1)
(2)


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