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2SD2012 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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2SD2012 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
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1 / 5 page  2SD2012 2006-11-21 1 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications • High DC current gain: hFE (1) = 100 (min) • Low saturation voltage: VCE (sat) = 1.0 V (max) • High power dissipation: PC = 25 W (Tc = 25°C) Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 60 V Emitter-base voltage VEBO 7 V Collector current IC 3 A Base current IB 0.5 A Ta = 25°C 2.0 Collector power dissipation Tc = 25°C PC 25 W Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Unit: mm JEDEC ― JEITA ― TOSHIBA 2-10R1A Weight: 1.7 g (typ.) |
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