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2SK1365 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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2SK1365 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 6 page 2SK1365 2006-11-09 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±20 V, VDS = 0 V — — ±50 nA Drain cut−off current IDSS VDS = 800 V, VGS = 0 V — — 300 μA Drain−source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 1000 — — V Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 1.5 — 3.5 V Drain−source ON resistance RDS (ON) ID = 4 A, VGS = 10 V — 1.5 1.8 Ω Forward transfer admittance |Yfs| VDS = 20 V, ID = 4 A 2.0 4.0 — S Input capacitance Ciss — 1300 — Reverse transfer capacitance Crss — 100 — Output capacitance Coss VDS = 25 V, VGS = 0 V, f = 1 MHz — 180 — pF Rise time tr — 25 — Turn−on time ton — 40 — Fall time tf — 20 — Switching time Turn−off time toff — 100 — ns Total gate charge (Gate−source plus gate−drain) Qg — 120 — Gate−source charge Qgs — 70 — Gate−drain (“miller”) charge Qgd VDD ≈ 400 V, VGS = 10 V, ID = 7 A — 50 — nC Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR — — — 7 A Pulse drain reverse current (Note 1) IDRP — — — 21 A Forward voltage (diode) VDSF IDR = 7 A, VGS = 0 V — — −1.9 V Marking K1365 Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Part No. (or abbreviation code) |
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