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1SS423 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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1SS423 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 3 page 1SS423 2007-11-01 1 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS423 Ultra-High-Speed Switching Applications • Small package • Low forward voltage: VF (3) = 0.56 V (typ.) • Low reverse current: IR = 5 μA (max) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current IFM 200* mA Average forward current IO 100* mA Surge current (10 ms) IFSM 1* A Power dissipation P 100* mW Junction temperature Tj 125 °C Storage temperature range Tstg −55~125 °C Operating temperature range Topr −40~100 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: This is the absolute maximum rating for a single diode . Where two diodes are used, the absolute maximum rating per diode is 75 % that for the single diode. Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit VF (1) IF = 1 mA ― 0.28 ― VF (2) IF = 10 mA ― 0.36 ― Forward voltage VF (3) IF = 100 mA ― 0.56 0.62 V Reverse current IR VR = 40 V ― ― 5 μA Total capacitance (between cathode and anode) CT VR = 0, f = 1 MHz ― 15 ― pF Marking 1.ANODE1 2.CATHODE2 3.CATHODE1 ANODE2 JEDEC ― JEITA ― TOSHIBA 1-2S1C Weight: 0.0024 g (typ.) Unit: mm W9 |
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