1SS423

2007-11-01

1

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type

1SS423

Ultra-High-Speed Switching Applications

•

Small package

•

•

Characteristic

Symbol

Rating

Unit

Maximum (peak) reverse voltage

45

V

Reverse voltage

40

V

Maximum (peak) forward current

200*

mA

Average forward current

100*

mA

Surge current (10 ms)

1*

A

Power dissipation

P

100*

mW

Junction temperature

125

°C

Storage temperature range

−55~125

°C

Operating temperature range

−40~100

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.) may cause this product to

decrease in the reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

*: This is the absolute maximum rating for a single diode . Where two diodes are used,

the absolute maximum rating per diode is 75

% that for the single diode.

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

―

0.28

―

―

0.36

―

Forward voltage

―

0.56

0.62

V

Reverse current

―

―

5

μA

Total capacitance

(between cathode and anode)

―

15

―

pF

Marking

1.ANODE1

2.CATHODE2

3.CATHODE1

ANODE2

JEDEC

―

JEITA

―

TOSHIBA

1-2S1C

Weight: 0.0024 g (typ.)

Unit: mm

W9