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2SK1875 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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2SK1875 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 5 page 2SK1875 2007-11-01 1 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK1875 High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications • High |Yfs|: |Yfs| = 25 mS (typ.) • Low Ciss: Ciss = 7.5 pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Gate-drain voltage VGDS −20 V Gate current IG 10 mA Drain power dissipation PD 100 mW Junction temperature Tj 125 °C Storage temperature range Tstg −55~125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = −15 V, VDS = 0 V ⎯ ⎯ −1.0 nA Gate-drain breakdown voltage V (BR) GDS VDS = 0 V, IG = −100 μA −20 ⎯ ⎯ V Drain current IDSS (Note) VDS = 5 V, VGS = 0 V 6 ⎯ 32 mA Gate-source cut-off voltage VGS (OFF) VDS = 5 V, ID = 1 μA ⎯ ⎯ −2.5 V Forward transfer admittance ⎪Yfs⎪ VDS = 5 V, VGS = 0 V, f = 1 kHz 15 25 ⎯ mS Input capacitance Ciss VDS = 5 V, VGS = 0 V, f = 1 MHz ⎯ 7.5 10 pF Reverse transfer capacitance Crss VDG = 5 V, ID = 0 A, f = 1 MHz ⎯ 2 3 pF Note: IDSS classification GR: 6~12 mA, BL: 10~20 mA, V: 16~32 mA (G) (L) (V) ( ) ...... IDSS rank marking Unit: mm JEDEC ― JEITA ― TOSHIBA 2-2E1B Weight: 0.006 g (typ.) |
Similar Part No. - 2SK1875_07 |
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Similar Description - 2SK1875_07 |
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