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2SK2037 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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2SK2037 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
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2 / 5 page  2SK2037 2007-11-01 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = 10 V, VDS = 0 ⎯ ⎯ 1 μA Drain-source breakdown voltage V (BR) DSS ID = 100 μA, VGS = 0 20 ⎯ ⎯ V Drain cut-off current IDSS VDS = 20 V, VGS = 0 ⎯ ⎯ 1 μA Gate threshold voltage Vth VDS = 3 V, ID = 0.1 mA 0.5 ⎯ 1.5 V Forward transfer admittance ⎪Yfs⎪ VDS = 3 V, ID = 10 mA 35 62 ⎯ mS Drain-source ON resistance RDS (ON) ID = 10 mA, VGS = 2.5 V ⎯ 3.5 6 Ω Input capacitance Ciss VDS = 3 V, VGS = 0, f = 1 MHz ⎯ 14 ⎯ pF Reverse transfer capacitance Crss VDS = 3 V, VGS = 0, f = 1 MHz ⎯ 5.3 ⎯ pF Output capacitance Coss VDS = 3 V, VGS = 0, f = 1 MHz ⎯ 16 ⎯ pF Turn-on time ton VDD = 3 V, ID = 10 mA VGS = 0~2.5 V ⎯ 0.28 ⎯ Switching time Turn-off time toff VDD = 3 V, ID = 10 mA VGS = 0~2.5 V ⎯ 0.34 ⎯ μs Switching Time Test Circuit |
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Similar Description - 2SK2037 |
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