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2SK2162 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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2SK2162 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 3 page 2SK2162 2006-11-21 2 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VDS = 0 V, VGS = ±20 V ⎯ ⎯ ±100 nA Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 180 ⎯ ⎯ V Gate-source cutoff current VGS (OFF) VDS = 10 V, ID = 10 mA 1.4 ⎯ 2.8 V Drain-source saturation voltage VDS (ON) ID = 0.6 A, VGS = 10 V ⎯ 1.7 3.0 V Forward transfer admittance ⎪Yfs⎪ VDS = 10 V, ID = 0.3 A ⎯ 0.7 ⎯ S Input capacitance Ciss ⎯ 170 ⎯ pF Output capacitance Coss ⎯ 45 ⎯ pF Reverse transfer capacitance Crss VDS = 10 V, VGS = 0 V, f = 1 MHz ⎯ 17 ⎯ pF This transistor is an electrostatic-sensitive device. Handle with care. Marking K2162 Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Part No. (or abbreviation code) |
Similar Part No. - 2SK2162_06 |
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Similar Description - 2SK2162_06 |
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