2SK2382 datasheet(2/6 Pages) TOSHIBA

Part #	2SK2382

Description	Silicon N Channel MOS Type Switching Regulator, DC−DC Converter and Motor Drive Applications

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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2 / 6 page

2SK2382

2006-11-21

2

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±16 V, VDS = 0 V

—

±10

μA

Drain cut−off current

IDSS

VDS = 200 V, VGS = 0 V

—

―

100

μA

Drain−source breakdown voltage

V (BR) DSS

ID = 10 mA, VGS = 0 V

200

―

V

Gate threshold voltage

Vth

VDS = 10 V, ID = 1 mA

1.5

―

3.5

V

Drain−source ON resistance

RDS (ON)

VGS = 10 V, ID = 10 A

―

0.13

0.18

Ω

Forward transfer admittance

|Yfs|

VDS = 10 V, ID = 10 A

10

17

―

S

Input capacitance

Ciss

—

2000

―

Reverse transfer capacitance

Crss

—

200

—

Output capacitance

Coss

VDS = 10 V, VGS = 0 V, f = 1 MHz

—

600

—

pF

Rise time

tr

—

35

—

Turn−on time

ton

—

50

—

Fall time

tf

—

10

—

Switching time

Turn−off time

toff

—

66

—

ns

Total gate charge

(Gate−source plus gate−drain)

Qg

—

40

—

Gate−source charge

Qgs

—

25

—

Gate−drain (“miller”) charge

Qgd

VDD ≈ 100 V, VGS = 10 V, ID = 15 A

—

15

—

nC

Source−Drain Ratings and Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Continuous drain reverse current

(Note 1)

IDR

—

15

A

Pulse drain reverse current

(Note 1)

IDRP

—

45

A

Forward voltage (diode)

VDSF

IDR = 15 A, VGS = 0 V

—

−2.0

V

Reverse recovery time

trr

—

180

—

ns

Reverse recovered charge

Qrr

IDR = 15 A, VGS = 0 V

dIDR / dt = 100 A / μs

—

1.13

—

μC

Marking

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

K2382

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