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2SK2382 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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2SK2382 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 6 page 2SK2382 2006-11-21 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V — — ±10 μA Drain cut−off current IDSS VDS = 200 V, VGS = 0 V — ― 100 μA Drain−source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 200 ― ― V Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 1.5 ― 3.5 V Drain−source ON resistance RDS (ON) VGS = 10 V, ID = 10 A ― 0.13 0.18 Ω Forward transfer admittance |Yfs| VDS = 10 V, ID = 10 A 10 17 ― S Input capacitance Ciss — 2000 ― Reverse transfer capacitance Crss — 200 — Output capacitance Coss VDS = 10 V, VGS = 0 V, f = 1 MHz — 600 — pF Rise time tr — 35 — Turn−on time ton — 50 — Fall time tf — 10 — Switching time Turn−off time toff — 66 — ns Total gate charge (Gate−source plus gate−drain) Qg — 40 — Gate−source charge Qgs — 25 — Gate−drain (“miller”) charge Qgd VDD ≈ 100 V, VGS = 10 V, ID = 15 A — 15 — nC Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR — — — 15 A Pulse drain reverse current (Note 1) IDRP — — — 45 A Forward voltage (diode) VDSF IDR = 15 A, VGS = 0 V — — −2.0 V Reverse recovery time trr — 180 — ns Reverse recovered charge Qrr IDR = 15 A, VGS = 0 V dIDR / dt = 100 A / μs — 1.13 — μC Marking Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. K2382 Part No. (or abbreviation code) |
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