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2SK2551 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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2SK2551 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 6 page 2SK2551 2006-11-17 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V — — ±10 μA Drain cut−off current IDSS VDS = 50 V, VGS = 0 V — — 100 μA Drain−source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 50 — — V Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 1.5 — 3.0 V Drain−source ON resistance RDS (ON) VGS = 10 V, ID = 25 A — 7.2 11 mΩ Forward transfer admittance |Yfs| VDS = 10 V, ID = 25 A 30 50 — S Input capacitance Ciss — 4000 — Reverse transfer capacitance Crss — 800 — Output capacitance Coss VDS = 10 V, VGS = 0 V, f = 1 MHz — 2000 — pF Rise time tr — 25 — Turn−on time ton — 40 — Fall time tf — 120 — Switching time Turn−off time toff — 360 — ns Total gate charge (Gate−source plus gate−drain) Qg — 130 — Gate−source charge Qgs — 90 — Gate−drain (“miller”) charge Qgd VDD ≈ 40 V, VGS = 10 V, ID = 50 A — 40 — nC Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR — — — 50 A Pulse drain reverse current (Note 1) IDRP — — — 200 A Forward voltage (diode) VDSF IDR = 50 A, VGS = 0 V — — −1.7 V Reverse recovery time trr — 140 — ns Reverse recovered charge Qrr IDR = 50 A, VGS = 0 V dIDR / dt = 50 A / μs — 77 — μC Marking K2551 Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Part No. (or abbreviation code) |
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