2SK211 datasheet(1/6 Pages) TOSHIBA

Part #	2SK211

Description	Silicon N Channel Junction Type FM Tuner Applications

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

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2SK211

2007-11-01

1

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type

2SK211

FM Tuner Applications

VHF Band Amplifier Applications

• Low noise figure: NF = 2.5dB (typ.) (f = 100 MHz)

• High forward transfer admitance: |Yfs| = 9 mS (typ.)

• Extremely low reverse transfer capacitance: Crss = 0.1 pF (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Gate-drain voltage

VGDO

−18

V

Gate current

IG

10

mA

Drain power dissipation

PD

150

mW

Junction temperature

Tj

125

°C

Storage temperature range

Tstg

−55~125

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate,

etc).

Marking

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = −0.5 V, VDS = 0 V

⎯

−10

nA

Gate-drain breakdown voltage

V (BR) GDO

IG = −100 μA

−18

⎯

V

Drain current

IDSS

(Note)

VGS = 0 V, VDS = 10 V

1.0

⎯

10

mA

Gate-source cut-off voltage

VGS (OFF)

VDS = 10 V, ID = 1 μA

−0.4

⎯

−4.0

V

Forward transfer admittance

⎪Yfs⎪

VGS = 0 V, VDS = 10 V, f = 1 kHz

⎯

9

⎯

mS

Input capacitance

Ciss

VDS = 10 V, VGS = 0 V, f = 1 MHz

⎯

6.0

⎯

pF

Reverse transfer capacitance

Crss

VGD = −10 V, f = 1 MHz

⎯

0.15

pF

Power gain

GPS

VDD = 10 V, f = 100 MHz (Figure)

⎯

18

⎯

dB

Noise figure

NF

VDD = 10 V, f = 100 MHz (Figure)

⎯

2.5

3.5

dB

Note: IDSS classification O: 1.0~3.0 mA, Y: 2.5~6.0 mA, GR (G): 5.0~10.0 mA

Unit: mm

JEDEC

―

JEITA

SC-59

TOSHIBA

2-3F1C

Weight: 0.012 g (typ.)

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