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2SK2614 Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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2SK2614 Datasheet(HTML) 3 Page - Toshiba Semiconductor |
3 / 6 page 2SK2614 2006-11-17 3 Drain current ID (A) |Yfs| – ID Drain current ID (A) RDS (ON) – ID Drain-source voltage VDS (V) ID – VDS Drain-source voltage VDS (V) ID – VDS Gate-source voltage VGS (V) ID – VGS Gate-source voltage VGS (V) VDS – VGS ID = 25 A 12 Common source Tc = 25°C Pulse test 1.2 0 0 4 0.4 0.8 1.6 2.0 8 12 16 20 6 30 0 0 2 10 20 40 50 100 Tc = −55°C 4 6 8 10 Common source VDS = 10 V Pulse test 25 10 0 0 20 50 10 4 10 30 40 Common source Tc = 25°C Pulse test 2 6 8 3.5 4 8 VGS = 3 V 4.5 5 15 6 Tc = −55°C 100 25 1 1 10 3 100 30 10 3 5 50 100 5 30 50 Common source VDS = 10 V Pulse test Common source Tc = 25°C Pulse test 0.01 110 3100 0.3 0.1 0.03 0.05 0.5 1 5 30 50 VGS = 4 V 10 0 0 8 20 1.0 4 12 16 Common source Tc = 25°C Pulse test 0.2 0.6 0.8 VGS = 3 V 15 6 4 5 3.5 0.4 8 10 |
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