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2SK2882 Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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2SK2882 Datasheet(HTML) 4 Page - Toshiba Semiconductor |
4 / 6 page 2SK2882 2006-11-20 4 Case temperature Tc (°C) RDS (ON) – Tc Drain-source voltage VDS (V) IDR – VDS Drain-source voltage VDS (V) Capacitance – VDS Case temperature Tc (°C) Vth – Tc Case temperature Tc (°C) PD – Tc Total gate charge Qg (nC) Dynamic Input/Output Characteristics 0 0 20 60 160 80 40 40 120 0 −80 160 40 −40 80 120 Common source Pulse test ID = 18 A 0 40 80 120 160 200 4.5 9 −80 160 80 −40 40 0 120 Common source VDS = 10 V ID = 1 mA Pulse test 3 0 1 2 4 0 0 40 160 40 80 120 20 60 VDS VGS 30 VDD = 120 V 0 20 40 10 30 Common source ID = 18 A Tc = 25°C Pulse test 60 1 0 Common source Tc = 25°C Pulse test 1 10 30 50 100 VGS = 0, −1 V 3 5 −0.4 −0.8 −1.2 −1.6 3 5 10 10 30 Common source VGS = 0 V f = 1 MHz Tc = 25°C 100 5000 50 3000 0.1 0.3 0.5 1 10 30 50 100 35 Crss Coss Ciss 300 500 1000 |
Similar Part No. - 2SK2882_06 |
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Similar Description - 2SK2882_06 |
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