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2SK2882 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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2SK2882 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 6 page 2SK2882 2006-11-20 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 μA Drain cut-off current IDSS VDS = 150 V, VGS = 0 V ⎯ ⎯ 100 μA Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 150 ⎯ ⎯ V Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 0.8 ⎯ 2.0 V VGS = 4 V, ID = 9 A ⎯ 0.09 0.18 Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 9 A ⎯ 0.08 0.12 Ω Forward transfer admittance ⎪Yfs⎪ VDS = 10 V, ID = 9 A 10 17 ⎯ S Input capacitance Ciss ⎯ 1380 ⎯ pF Reverse transfer capacitance Crss ⎯ 200 ⎯ pF Output capacitance Coss VDS = 10 V, VGS = 0 V, f = 1 MHz ⎯ 610 ⎯ pF Rise time tr ⎯ 12 ⎯ Turn-on time ton ⎯ 24 ⎯ Fall time tf ⎯ 56 ⎯ Switching time Turn-off time toff Duty <= 1%, tw = 10 μs ⎯ 130 ⎯ ns Total gate charge (gate-source plus gate-drain) Qg ⎯ 57 ⎯ nC Gate-source charge Qgs ⎯ 43 ⎯ nC Gate-drain (“miller”) charge Qgd VDD ∼− 120 V, VGS = 10 V, ID = 18 A ⎯ 14 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR ⎯ ⎯ ⎯ 18 A Pulse drain reverse current (Note 1) IDRP ⎯ ⎯ ⎯ 54 A Forward voltage (diode) VDSF IDR = 18 A, VGS = 0 V ⎯ ⎯ −1.7 V Reverse recovery time trr ⎯ 185 ⎯ ns Reverse recovery charge Qrr IDR = 18 A, VGS = 0 V dIDR/dt = 100 A/μs ⎯ 1.3 ⎯ μC Marking 0 V 10 V VGS VDD ∼− 100 V ID = 9 A VOUT Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. K2882 Part No. (or abbreviation code) |
Similar Part No. - 2SK2882_06 |
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Similar Description - 2SK2882_06 |
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