2SK2882_06 datasheet(2/6 Pages) TOSHIBA

Part #	2SK2882

Description	Silicon N Channel MOS Type Chopper Regulator, DC-DC Converter and Motor Drive Applications

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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2 / 6 page

2SK2882

2006-11-20

2

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±16 V, VDS = 0 V

⎯

±10

μA

Drain cut-off current

IDSS

VDS = 150 V, VGS = 0 V

⎯

100

μA

Drain-source breakdown voltage

V (BR) DSS

ID = 10 mA, VGS = 0 V

150

⎯

V

Gate threshold voltage

Vth

VDS = 10 V, ID = 1 mA

0.8

⎯

2.0

V

VGS = 4 V, ID = 9 A

⎯

0.09

0.18

Drain-source ON resistance

RDS (ON)

VGS = 10 V, ID = 9 A

⎯

0.08

0.12

Ω

Forward transfer admittance

⎪Yfs⎪

VDS = 10 V, ID = 9 A

10

17

⎯

S

Input capacitance

Ciss

⎯

1380

⎯

pF

Reverse transfer capacitance

Crss

⎯

200

⎯

pF

Output capacitance

Coss

VDS = 10 V, VGS = 0 V, f = 1 MHz

⎯

610

⎯

pF

Rise time

tr

⎯

12

⎯

Turn-on time

ton

⎯

24

⎯

Fall time

tf

⎯

56

⎯

Switching time

Turn-off time

toff

Duty <= 1%, tw = 10 μs

⎯

130

⎯

ns

Total gate charge

(gate-source plus gate-drain)

Qg

⎯

57

⎯

nC

Gate-source charge

Qgs

⎯

43

⎯

nC

Gate-drain (“miller”) charge

Qgd

VDD ∼− 120 V, VGS = 10 V, ID = 18 A

⎯

14

⎯

nC

Source-Drain Ratings and Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Continuous drain reverse current

(Note 1)

IDR

⎯

18

A

Pulse drain reverse current

(Note 1)

IDRP

⎯

54

A

Forward voltage (diode)

VDSF

IDR = 18 A, VGS = 0 V

⎯

−1.7

V

Reverse recovery time

trr

⎯

185

⎯

ns

Reverse recovery charge

Qrr

IDR = 18 A, VGS = 0 V

dIDR/dt = 100 A/μs

⎯

1.3

⎯

μC

Marking

0 V

10 V

VGS

VDD ∼− 100 V

ID = 9 A

VOUT

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

K2882

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