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2SK2965 Datasheet(HTML) 1 Page - Toshiba Semiconductor

Part No. 2SK2965
Description  Silicon N Channel MOS Type Switching Regulator, DC−DC Converter and Motor Drive Applications
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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2SK2965 Datasheet(HTML) 1 Page - Toshiba Semiconductor

   
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2SK2965
2006-11-21
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2965
Switching Regulator, DC−DC Converter and Motor Drive
Applications
Low drain−source ON resistance
: RDS (ON) = 0.15 Ω (typ.)
High forward transfer admittance
: |Yfs| = 10 S (typ.)
Low leakage current : IDSS = 100 μA (max) (VDS = 200 V)
Enhancement mode
: Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain–source voltage
VDSS
200
V
Drain–gate voltage (RGS = 20 kΩ)
VDGR
200
V
Gate–source voltage
VGSS
±20
V
DC
(Note 1)
ID
11
A
Drain current
Pulse (Note 1)
IDP
33
A
Drain power dissipation (Tc = 25°C)
PD
35
W
Single pulse avalanche energy
(Note 2)
EAS
115
mJ
Avalanche current
IAR
11
A
Repetitive avalanche energy (Note 3)
EAR
3.5
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch–c)
3.57
°C / W
Thermal resistance, channel to
ambient
Rth (ch–a)
62.5
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 50 V, Tch = 25°C (initial), L = 1.53 mH, RG = 25 Ω, IAR = 11 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature.
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit: mm
JEDEC
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)


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