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2SK3131 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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2SK3131 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 6 page 2SK3131 2006-11-06 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±25 V, VDS = 0 V — — ±10 μA Gate−source breakdown voltage V (BR) GSS IG = ±100 μA, VDS = 0 V ±30 — — V Drain cut−off current IDSS VDS = 500 V, VGS = 0 V — — 100 μA Drain−source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 500 — — V Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 2.4 — 3.4 V Drain−source ON resistance RDS (ON) VGS = 10 V, ID = 25 A — 0.085 0.11 Ω Forward transfer admittance |Yfs| VDS = 10 V, ID = 25 A 15 35 — S Input capacitance Ciss — 11000 — Reverse transfer capacitance Crss — 2100 — Output capacitance Coss VDS = 10 V, VGS = 0 V, f = 1 MHz — 4200 — pF Rise time tr — 105 — Turn−on time ton — 160 — Fall time tf — 65 — Switching time Turn−off time toff — 245 — ns Total gate charge (Gate−source plus gate−drain) Qg — 280 — Gate−source charge Qgs — 150 — Gate−drain (“miller”) charge Qgd VDD ≈ 400 V, VGS = 10 V, ID = 50 A — 130 — nC Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR — — — 50 A Pulse drain reverse current (Note 1) IDRP — — — 200 A Forward voltage (diode) VDSF VDR = 25 A, VGS = 0 V — — −1.7 V Reverse recovery time trr — 105 — ns Reverse recovery charge Qrr IDR = 50 A, VGS = 0 V dIDR / dt = 100 A / μs — 380 — nC Marking 2SK3131 TOSHIBA JAPAN Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Part No. (or abbreviation code) |
Similar Part No. - 2SK3131_06 |
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Similar Description - 2SK3131_06 |
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