Electronic Components Datasheet Search |
|
2SK3176 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
|
2SK3176 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 6 page 2SK3176 2007-03-16 1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( π-MOS V) 2SK3176 Switching Regulator, DC-DC Converter and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 38 mΩ (typ.) • High forward transfer admittance: |Yfs| = 30 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 200 V) • Enhancement-mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 200 V Drain-gate voltage (RGS = 20 kΩ) VDGR 200 V Gate-source voltage VGSS ±20 V DC (Note 1) ID 30 Drain current Pulse (Note 1) IDP 120 A Drain power dissipation (Tc = 25°C) PD 150 W Single pulse avalanche energy (Note 2) EAS 925 mJ Avalanche current IAR 30 A Repetitive avalanche energy (Note 3) EAR 15 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note 1: Please use devices on condition that the channel temperature is below 150 °C. Note 2: VDD = 50 V, Tch = 25°C (initial), L = 1.66 mH, RG = 25 Ω, IAR = 30 A Note 3: Repetitive rating: pulse width limited by maximum junction temperature. Note 4: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic sensitive device. Please handle with caution. Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case Rth (ch-c) 0.833 °C/W Thermal resistance, channel to ambient Rth (ch-a) 50.0 °C/W Unit: mm 1. GATE 2. DRAIN (HEAT SINK) 3. SOURCE JEDEC ⎯ JEITA SC-65 TOSHIBA 2-16C1B Weight: 4.6 g (typ.) |
Similar Part No. - 2SK3176_07 |
|
Similar Description - 2SK3176_07 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |