 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
2SK3567 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
|
||||||||||||||||||||||||||||||
2SK3567 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
|
|
1 / 6 page  2SK3567 2006-11-08 1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3567 Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 1.7Ω (typ.) • High forward transfer admittance: |Yfs| = 2.5S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 600 V) • Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 600 V Drain-gate voltage (RGS = 20 kΩ) VDGR 600 V Gate-source voltage VGSS ±30 V DC (Note 1) ID 3.5 Drain current Pulse (t = 1 ms) (Note 1) IDP 14 A Drain power dissipation (Tc = 25°C) PD 35 W Single pulse avalanche energy (Note 2) EAS 201 mJ Avalanche current IAR 3.5 A Repetitive avalanche energy (Note 3) EAR 3.5 mJ Channel temperature Tch 150 °C Storage temperature range Tstg -55~150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case Rth (ch-c) 3.57 °C/W Thermal resistance, channel to ambient Rth (ch-a) 62.5 °C/W Note 1: Ensure that the channel temperature does not exceed 150℃. Note 2: VDD = 90 V, Tch = 25°C(initial), L = 28.8 mH, IAR = 3.5 A, RG = 25 Ω Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution. Unit: mm 1: Gate 2: Drain 3: Source JEDEC ― JEITA SC-67 TOSHIBA 2-10U1B Weight : 1.7 g (typ.) 1 3 2 |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
