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6N137 Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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6N137 Datasheet(HTML) 3 Page - Toshiba Semiconductor |
3 / 8 page 6N137 2007-10-01 3 Electrical Characteristics Over Recommended Temperature (Ta = 0~70°C unless otherwise noted) Characteristic Symbol Test Condition Min. (**)Typ. Max. Unit High level output current IOH VCC=5.5V, VO=5.5V IF=250μA, VE = 2.0V ― 1 250 μA Low level output voltage VOL VCC=5.5V, IF=5mA VEH=2.0V IOL(sinking)=13mA ― 0.4 0.6 V High level enable current IEH VCC=5.5V, VE=2.0V ― −1.0 ― mA Low level enable current IEL VCC=5.5V, VE=0.5V ― −1.6 −2.0 mA High level supply current ICCH VCC=5.5V, IF=0, VE=0.5V ― 7 15 mA Low level supply current ICCL VCC=5.5V, IF=10mA VE=0.5V ― 12 18 mA Resistance (input −output) (Note 3) RI−O VI−O=500V, Ta=25°C R.H.≤60% ― 10 12 ― Ω Capacitance (input −output) (Note 3) CI−O f=1MHz, Ta=25°C ― 0.6 ― pF Input forward voltage VF IF=10mA, Ta=25°C ― 1.65 1.75 V Input reverse breakdown voltage BVR IR=10μA, Ta=25°C 5 ― ― V Input capacitance CIN VF=0, f=1MHz ― 45 ― pF Current transfer ratio CTR IF=5.0mA, RL=100Ω ― 1000 ― % (**) All typical values are at VCC=5V, Ta=25°C (Note 3) Pins 1, 2, 3 and 4 shorted together and pins 5, 6, 7 and 8 shorted together. |
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