16DL2CZ47A,16FL2CZ47A

2006-11-08

1

TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE

16DL2CZ47A,16FL2CZ47A

SWITCHING MODE POWER SUPPLY APPLICATION

CONVERTER & CHOPPER APPLICATION

Repetitive Peak Reverse Voltage

Low Switching Losses and Output Noise

CHARACTERISTIC

SYMBOL

RATING

UNIT

16DL2CZ47A

200

Repetitive Peak

Reverse Voltage

16FL2CZ47A

100

V

Average Output Rectified Current

(Full Sine Waveform)

16

A

80 (50Hz)

Peak One Cycle Surge Forward

Current (Non−Repetitive)

88 (60Hz)

A

Junction Temperature

−40~150

°C

Storage Temperature Range

−40~150

°C

Screw Torque

―

0.6

N·m

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN

TYP.

MAX

UNIT

16DL2CZ47A

―

―

0.98

Peak Forward

Voltage

(Note 1) 16FL2CZ47A

―

―

1.3

V

Repetitive Peak ReverseCurrent

(Note 1)

―

―

50

μA

Reverse Recovery Time

(Note 1)

―

―

35

ns

Forward Recovery Time

(Note 1)

―

―

100

ns

Thermal Resistance

Total DC, Junction to Case

―

―

3.3

°C / W

Note 1: A value applied to one cell.

POLARITY

Unit: mm

JEDEC

⎯

JEITA

⎯

TOSHIBA

12−10C1A

Weight: 2.0 g (typ.)