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TMS28F200BZT80BDBJL Datasheet(PDF) 7 Page - Texas Instruments

Part # TMS28F200BZT80BDBJL
Description  262144 BY 8-BIT/131072 BY 16-BIT BOOT-BLOCK FLASH MEMORIES
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

TMS28F200BZT80BDBJL Datasheet(HTML) 7 Page - Texas Instruments

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TMS28F200BZT, TMS28F200BZB
262144 BY 8-BIT/131072 BY 16-BIT
BOOT-BLOCK FLASH MEMORIES
SMJS200E – JUNE 1994 – REVISED JANUARY 1998
7
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
status register
(continued)
Table 3. Status-Register Bit Definitions and Functions
STATUS
FUNCTION
DATA
COMMENTS
BIT
FUNCTION
DATA
COMMENTS
SB7
Write state machine status
1 = Ready
If SB7 = 0 (busy), the WSM has not completed an erase or
programming operation. If SB7 = 1 (ready), other polling
operations can be performed. Until this occurs, the other status
bits are not valid If the WSM status bit shows busy (0) the user
SB7
Write-state-machine status
y
0 = Busy
bits are not valid. If the WSM status bit shows busy (0), the user
must periodically toggle E or G to determine when the WSM has
completed an operation (SB7=1) since SB7 is not automatically
updated at the completion of a WSM task.
SB6
Erase-suspend status
(ESS)
1 = Erase suspended
0 = Erase in progress or
completed
When an erase-suspend command is issued, the WSM halts
execution and sets the ESS bit high (SB6 = 1) indicating that the
erase operation has been suspended. The WSM bit is also set
high (SB7 = 1) indicating that the erase-suspend operation has
been successfully completed. The ESS bit remains at a logic-high
level until an erase-resume command is input to the CSM (code
D0h ).
SB5
Erase status
(ES)
1 = Block-erase error
0 = Block-erase good
SB5 = 0 indicates that a successful block-erasure has occurred.
SB5 = 1 indicates that an erase-error has occurred. In this case,
the WSM has completed the maximum allowed erase pulses
determined by the internal algorithm, but this was insufficient to
completely erase the device.
SB4
Program status
(PS)
1 = Byte/word-program error
0 = Byte/word-program good
SB4 = 0 indicates successful programming has occurred at the
addressed block location. SB4 = 1 indicates that the WSM was
unable to correctly program the addressed block location.
SB3
VPP status
(VPPS)
1 = Program abort:
VPP range error
0= VPP good
SB3 provides information on the status of VPP during
programming. If VPP is lower than VPPL after a program or erase
command has been issued, SB3 is set to a 1 to indicate that the
programming operation is aborted. If VPP is between VPPH and
VPPL, SB3 will not be set.
SB2 –
SB0
Reserved
These bits should be masked out when reading the status
register.
byte-wide or word-wide mode selection
The memory array is divided into two parts: an upper-half that outputs data through I/O pins DQ8 – DQ15, and
a lower-half that outputs data through DQ0 – DQ7. Device operation in either byte-wide or word-wide mode is
user-selectable and is determined by the logic state of BYTE. When BYTE is at a logic-high level, the device
is in the word-wide mode and data is written to or read from I/O pins DQ0 – DQ15. When BYTE is at a logic-low
level, the device is in the byte-wide mode and data is written to or read from I/O pins DQ0 – DQ7. In the byte-wide
mode, I/O pins DQ8 – DQ14 are placed in the high-impedance state and DQ15/A –1 becomes the low-order
address pin and selects either the upper- or lower-half of the array. Array data from the upper-half (DQ8 – DQ15 )
and the lower-half (DQ0 – DQ7 ) are multiplexed in order to appear on DQ0 – DQ7. Table 4 and Table 5
summarize operations for word-wide mode and byte-wide mode, respectively.


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