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TC9WMC1FU Datasheet(PDF) 6 Page - Toshiba Semiconductor

Part # TC9WMC1FU
Description  CMOS Digital Integrated Circuits Silicon Monolithic
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TC9WMC1FU Datasheet(HTML) 6 Page - Toshiba Semiconductor

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TC9WMC1FK/FU,TC9WMC2FK/FU
2007-10-19
6
(3.3) Erase (ERASE)
The Erase instruction writes all bits in the specified memory location to 1. After the CS is driven
High, a start bit is transferred followed by the ERASE instruction and address. In this mode, data
does not need to be transferred. After the least significant bit (A0) of the address is received on the
falling edge of SK, an erase operation is triggered by the CS being pulled Low.
CS
SK
1 2
7 8 9 10
1
1
1
DI
DO
Hi-Z
A5
3 4 5 6
A4 A3 A2 A1 A0
Hi-Z
Figure 6. Erase Timing Diagram (TC9WMC2)
Busy
Ready
Verify
11
A6
x
tPW
CS
SK
1 2
7 8 9
1
1
1
DI
DO
Hi-Z
A5
3 4 5 6
A4 A3 A2 A1 A0
Hi-Z
Figure 5. Erase Timing Diagram (TC9WMC1)
Busy
Ready
Verify
tPW


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