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TLP3123 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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TLP3123 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 6 page TLP3123 2007-10-01 2 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Forward current IF 30 mA Forward current derating (Ta >= 25°C) ΔIF/°C −0.3 mA/°C Reverse voltage VR 5 V Junction temperature Tj 125 °C Off-state output terminal voltage VOFF 40 V On-state current ION 1 A On-state current derating (Ta >= 50°C) ΔION/°C −13.3 mA/°C Pulse on-state current (t = 100 ms) IONP 2 A Power dissipation (Ta = 50°C) PO 130 mW Junction temperature Tj 125 °C Storage temperature range Tstg −55~125 °C Operating temperature range Topr −40~85 °C Lead soldering temperature (10 s) Tsol 260 °C Isolation voltage (AC, 1 minute, R.H. <= 60%) (Note 1) BVS 1500 Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (Note 1) : Device considered a two-terminal device : LED side pins shorted together, and detector side pins shorted together. Recommended Operating Conditions Characteristic Symbol Min. Typ. Max. Unit Supply voltage VDD ⎯ ⎯ 32 V Forward current IF 5 10 20 mA Operating temperature Topr 25 ⎯ 60 °C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. Individual Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Forward voltage VF IF = 10 mA 1.18 1.33 1.48 V Reverse current IR VR = 5 V ⎯ ⎯ 10 μA Capacitance CT V = 0, f = 1 MHz ⎯ 70 ⎯ pF Off-state current IOFF VOFF = 30 V ⎯ ⎯ 1 nA Capacitance COFF V = 0, f = 1 MHz ⎯ 300 ⎯ pF |
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