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QM50TB-24 Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor |
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QM50TB-24 Datasheet(HTML) 2 Page - Mitsubishi Electric Semiconductor |
2 / 5 page Feb.1999 Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) –VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Symbol VCEX (SUS) VCEX VCBO VEBO IC –IC PC IB –ICSM Tj Tstg Viso — — Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage Mounting torque Weight Ratings 1200 1200 1200 7 50 50 400 3 500 –40~+150 –40~+125 2500 0.98~1.47 10~15 1.47~1.96 15~20 660 Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25 °C DC Peak value of one cycle of 60Hz (half wave) Charged part to case, AC for 1 minute Main terminal screw M4 Mounting screw M5 Typical value ABSOLUTE MAXIMUM RATINGS (Tj=25 °C, unless otherwise noted) Unit V V V V A A W A A °C °C V N·m kg·cm N·m kg·cm g MITSUBISHI TRANSISTOR MODULES QM50TB-24 MEDIUM POWER SWITCHING USE INSULATED TYPE ELECTRICAL CHARACTERISTICS (Tj=25 °C, unless otherwise noted) Unit mA mA mA V V V — µs µs µs °C/W °C/W °C/W Limits Min. — — — — — — 75 — — — — — — Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain Switching time Thermal resistance (junction to case) Contact thermal resistance (case to fin) Test conditions VCE=1200V, VEB=2V VCB=1200V, Emitter open VEB=7V IC=50A, IB=1A –IC=50A (diode forward voltage) IC=50A, VCE=5V VCC=600V, IC=50A, IB1=–IB2=1A Transistor part (per 1/6 module) Diode part (per 1/6 module) Conductive grease applied (1/6module) Typ. — — — — — — — — — — — — — Max. 1.0 1.0 200 3.0 3.5 1.8 — 2.5 15 3.0 0.31 1.2 0.2 |
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Similar Description - QM50TB-24 |
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