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TLP560G Datasheet(PDF) 3 Page - Toshiba Semiconductor

Part # TLP560G
Description  GaAs Ired & Photo−Triac
Download  6 Pages
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TLP560G Datasheet(HTML) 3 Page - Toshiba Semiconductor

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TLP560G
2007-10-01
3
Individual Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Forward voltage
VF
IF = 10mA
1.0
1.15
1.3
V
Reverse current
IR
VR = 5V
―
―
10
μA
Capacitance
CT
V = 0, f = 1MHz
―
10
―
pF
Peak off
−state current
IDRM
VDRM = 400V
―
10
100
nA
Peak on
−state voltage
VTM
ITM = 100 mA
―
1.7
3.0
V
Holding current
IH
―
―
0.6
―
mA
Critical rate of rise of
off
−state voltage
dv / dt
Vin = 120Vrms, Ta = 85°C
(Fig.1)
200
500
―
V / μs
Critical rate of rise of
commutating voltage
dv / dt(c)
Vin = 30Vrms, IT = 15mA
(Fig.1)
―
0.2
―
V / μs
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Trigger LED current
IFT
VT = 3V
―
5
10
mA
Capacitance
(input to output)
CS
VS = 0, f = 1MHz
―
0.8
―
pF
Isolation resistance
RS
VS = 500V
5×10
10
10
14
―
Ω
AC, 1 minute
2500
―
―
AC, 1 second, in oil
―
5000
―
Vrms
Isolation voltage
BVS
DC, 1 minute, in oil
―
5000
―
Vdc
Fig.1: dv / dt test circuit
1
2
3
6
4
Rin
2kΩ
120Ω
VCC
Vin
–
+
dv / dt(c)
dv / dt
5V, VCC
0V


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