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TC74HCT245AF Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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TC74HCT245AF Datasheet(HTML) 4 Page - Toshiba Semiconductor |
4 / 7 page TC74HCT245AP/AF 2007-10-01 4 AC Characteristics (input: tr = tf = 6 ns) Test Condition Ta = 25°C Ta = −40 to 85°C Characteristics Symbol CL (pF) VCC (V) Min Typ. Max Min Max Unit Output transition time tTLH tTHL ⎯ 50 4.5 5.5 ⎯ ⎯ 7 6 12 11 ⎯ ⎯ 15 14 ns 50 4.5 5.5 ⎯ ⎯ 13 11 22 20 ⎯ ⎯ 28 25 Propagation delay time tpLH tpHL ⎯ 150 4.5 5.5 ⎯ ⎯ 18 16 30 27 ⎯ ⎯ 38 34 ns 50 4.5 5.5 ⎯ ⎯ 19 16 30 27 ⎯ ⎯ 38 34 3-state output enable time tpZL tpZH RL = 1 kΩ 150 4.5 5.5 ⎯ ⎯ 24 22 38 34 ⎯ ⎯ 48 43 ns 3-state output disable time tpLZ tpHZ RL = 1 kΩ 50 4.5 5.5 ⎯ ⎯ 17 16 30 27 ⎯ ⎯ 38 34 ns Input capacitance CIN DIR, G ⎯ 5 10 ⎯ 10 pF Output capacitance CI/O An, Bn ⎯ 13 ⎯ ⎯ ⎯ pF Power dissipation capacitance CPD (Note) ⎯ ⎯ 41 ⎯ ⎯ ⎯ pF Note: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC (opr) = CPD・VCC・fIN + ICC/8 (per bit) |
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