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AOL1424 Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors |
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AOL1424 Datasheet(HTML) 2 Page - Alpha & Omega Semiconductors |
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2 / 5 page  AOL1424 Symbol Min Typ Max Units BVDSS 30 V 1 TJ=55°C 5 IGSS 10 µA VGS(th) 1.4 1.8 2.5 V ID(ON) 120 A 4.5 5.4 TJ=125°C 6.3 7.6 6.5 8.0 m Ω gFS 67 S VSD 0.7 1.0 V IS 70 A Ciss 1803 2170 pF Coss 387 pF Crss 238 pF Rg 1.3 2 Ω Qg(10V) 36 48 nC Qg(4.5V) 19 nC Qgs 3.9 nC Qgd 8.7 nC tD(on) 7.6 ns tr 6.4 ns tD(off) 27 ns tf 8.5 ns trr 27 33 ns Qrr 17 nC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs Drain-Source Breakdown Voltage On state drain current ID=250µA, VGS=0V VGS=10V, VDS=5V VGS=10V, ID=20A Reverse Transfer Capacitance IF=20A, dI/dt=100A/µs Electrical Characteristics (TJ=25°C unless otherwise noted) STATIC PARAMETERS Parameter Conditions IDSS µA Gate Threshold Voltage VDS=VGS ID=250µA VDS=30V, VGS=0V VDS=0V, VGS= ±16V Zero Gate Voltage Drain Current Gate-Body leakage current RDS(ON) Static Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage Maximum Body-Diode Continuous Current Input Capacitance Output Capacitance DYNAMIC PARAMETERS m Ω VGS=4.5V, ID=20A IS=1A,VGS=0V VDS=5V, ID=20A Turn-On Rise Time Turn-Off DelayTime VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω Turn-Off Fall Time Turn-On DelayTime Gate Drain Charge VGS=0V, VDS=15V, f=1MHz SWITCHING PARAMETERS Total Gate Charge Gate Source Charge Gate resistance VGS=0V, VDS=0V, f=1MHz Total Gate Charge VGS=10V, VDS=15V, ID=20A A: The value of RθJA is measured with the device in a still air environment with TA =25°C. The power dissipation PDSM and current rating IDSM are based on TJ(MAX)=150°C, using t ≤ 10s junction-to-ambient thermal resistance. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. H. EAR and IAR ratings are based on low frequency and duty cycles such that Tj(start)=25C for each pulse. Rev3: July 2007 Alpha & Omega Semiconductor, Ltd. www.aosmd.com |
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