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SI2312DS Datasheet(PDF) 2 Page - Vishay Siliconix |
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SI2312DS Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 5 page Si2312DS Vishay Siliconix www.vishay.com 2 Document Number: 71338 S-50574—Rev. E, 04-Apr-05 SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Symbol Test Conditions Min Typ Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 20 V Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 0.45 0.65 0.85 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "8 V "100 nA Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V 1 mA Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V, TJ = 70_C 75 mA On-State Drain Currenta ID(on) VDS w 10 V, VGS = 4.5 V 15 A VGS = 4.5 V, ID = 5.0 A 0.027 0.033 Drain-Source On-Resistancea rDS(on) VGS = 2.5 V, ID = 4.5 A 0.033 0.040 W SO DS(on) VGS = 1.8 V, ID = 4.0 A 0.042 0.051 W Forward Transconductancea gfs VDS = 15 V, ID = 5.0 A 40 S Diode Forward Voltage VSD IS = 1.0 A, VGS = 0 V 0.8 1.2 V Dynamicb Total Gate Charge Qg 11.2 14.0 Gate-Source Charge Qgs VDS = 10 V, VGS = 4.5 V, ID = 5.0 A 1.4 nC Gate-Drain Charge Qgd DS GS D 2.2 Switching Turn-On Delay Time td(on) 15 25 Rise Time tr VDD = 10 V, RL = 10 W 40 60 Turn-Off Delay Time td(off) VDD = 10 V, RL = 10 W ID ^ 1.0 A, VGEN = 4.5 V, Rg = 6 W 48 70 ns Fall-Time tf g 31 45 Source-Drain Reverse Recovery Time trr IF = 1.0 A, di/dt = 100 A/ms 13 25 Notes a. Pulse test: PW v300 ms duty cycle v2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0 3 6 9 12 15 0.0 0.5 1.0 1.5 2.0 0 3 6 9 12 15 01 23 4 VGS = 4.5 thru 2.0 V TC = 125_C −55_C 1.5 V 25_C Output Characteristics Transfer Characteristics VDS − Drain-to-Source Voltage (V) VGS − Gate-to-Source Voltage (V) 1.0 V 0.5 V |
Similar Part No. - SI2312DS_05 |
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Similar Description - SI2312DS_05 |
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